Chair: Matthew McCluskey (Washington State University)
Vice-chair: Shengbai Zhang (RPI)
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We are indebted to the Program Advisory Committee for their valuable input. Click here for Full Program (pdf).
Sunday evening (August 3)
Defects in Oxides. Discussion Leader: Klaus Thonke (University of Ulm, Germany).
Chris G. Van de Walle (UC Santa Barbara). Defect control in oxides: unleashing the potential of a new class of semiconductors.
Larry Halliburton (West Virginia University). ESR studies of defects and impurities in wide-band-gap semiconductors.
Monday morning
Silicon Interfaces. Discussion Leader: Len Brillson (Ohio State University).
Alfredo Pasquarello (EPFL, Lausanne, Switzerland). Defects in high-k dielectrics and their effect on the semiconductor/dielectric interface.
Interface Defects in Silicon Carbide. Discussion Leader: Evan Glaser (Naval Research Laboratory).
Sarit Dhar (Vanderbilt University, currently at Cree, Inc). The silicon dioxide-silicon carbide interface: Current status and recent advances.
Patricia Mooney (Simon Fraser University, Canada), DLTS measurements of interface states in SiO2/4H-SiC.
Monday evening
Applications to Solar Cells. Discussion Leader: Hans J. Queisser (emeritus, Max-Planck-Institute for Solids).
Richard R. King (Spectrolab, Inc). Metamorphic materials in III-V multijunction solar cells.
Malgorzata Igalson (Warsaw University of Technology, Poland). Metastabilites in chalcopyrites.
Stephan Lany (National Renewable Energy Laboratory). Theory of metastable defects in chalcopyrites.
Tuesday morning
Manganese Doped Quantum Dots. Discussion Leader: Mike Scarpulla (University of Utah)
Lucien BeSombes (CNRS Grenoble, France). Control of a single Mn atom in a quantum dot.
Doping of Nanocrystalline Silicon. Discussion Leader: David Norris (University of Minnesota).
Sven Rogge (TU-Delft, Netherlands). Single donors in Si nanodevices.
Andre R. Stegner (TU-Munich, Germany). Phosphorus doping of Si nanocrystals.
Tuesday evening
Defects in Nitride Semiconductors. Discussion Leader: Christian Wetzel (RPI).
Piotr Boguslawski (Institute of Physics, Warsaw, Poland). Theory of interfacial interdiffusion and electromigration and its application to H and vacancies in GaN.
Rebecca Jones (UC Berkeley). Native point defects and doping of group III-nitrides.
Tim Veal (University of Warwick, UK). Doping, defects and surfaces of InN.
Wednesday morning
Carbon Nanotubes. Discussion Leader: Kazu Suenaga (AIST, Japan).
Stefan Badescu (Naval Research Laboratory). Adsorption of chemical vapors on carbon nanotubes with engineered defects.
Doping of Diamond. Discussion Leader: Mark Newton (University of Warwick, UK).
Etienne Bustarret (CNRS, Grenoble, France). Superconducting diamond and silicon.
Jon Goss (University of Newcastle, UK). Density-functional calculations for bulk and transfer doping in diamond.
Wednesday evening
Isotopic Defects. Discussion Leader: Eugene Haller (UC Berkeley).
Jorge Serrano (Polytechnic University of Catalunya, Spain). Isotope effects in zinc oxide.
Mike Thewalt (Simon Fraser University, Canada). New insights into old defects - spectroscopy in highly enriched 28Si.
Thursday morning
Diffusion. Discussion Leader: Rachel Goldman (University of Michigan).
Hartmut Bracht (University of Muenster, Germany). Diffusion of defects and impurities in Ge and SiGe alloys.
Organic semiconductors. Discussion Leader: Shengbai Zhang (RPI).
Marilia J. Caldas (Sao Paulo University, Brazil). Hydrogen- and oxygen-related defects in the electronic polymer PPV.
Michael Chabinyc (Palo Alto Research Center, currently at UCSB). Characterization of defects in organic materials.
After-banquet speaker. Discussion Leader: Matt McCluskey (WSU).
Anant Ramdas (Purdue University). Tracking anonymous donors and acceptors in semiconductors.